Samsung patent application US20110205405 proposes an improvement of dark columns and rows ability to withstand a bright local spots in active area close to them. The dark columns/rows themselves can be effectively shielded from the light by metals. However, if there is a very bright spot in the active array next to the dark rows or columns, the charge can bloom into the dark area and distort the dark signal. To somewhat alleviate this, Samsung proposes to connect TG and RST gates of the few buffer pixels on the border between active and dark pixel area to VDD:
The idea is quite simple and straightforward and can be effective, to a degree. However, I did not see it patented anywhere. As an improvement of it I would couple FD directly to VDD too, in addition to TG.